cascadable silicon bipolar mmic amplifier technical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 3.2 ghz ? 8 db typical gain at 1.0 ghz ? 12.5 dbm typical p 1 db at 1.0 ghz ? unconditionally stable (k>1) ? surface mount plastic package ? tape-and-reel packaging option available [1] MSA-0486 86 plastic package typical biasing configuration note: 1. refer to packaging section tape- and-reel packaging for surface mount semiconductors. c block c block r bias v cc > 7 v v d = 5.25 v rfc (optional) in out msa 4 1 2 3 description the MSA-0486 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a low cost, surface mount plastic package. this mmic is designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in commercial and industrial applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0486 absolute maximum ratings parameter absolute maximum [1] device current 85 ma power dissipation [2,3] 500 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 to 150 c thermal resistance [2,4] : q jc = 100 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 10 mw/ c for t c > 100 c. 4. see measurements section thermal resistance for more information. part number ordering information part number no. of devices container MSA-0486-tr1 1000 7" reel MSA-0486-blk 100 antistatic bag for more information, see tape and reel packaging for semiconductor devices. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 8.3 f = 1.0 ghz 7.0 8.0 d g p gain flatness f = 0.1 to 2.0 ghz db 0.6 f 3 db 3 db bandwidth ghz 3.2 input vswr f = 0.1 to 3.0 ghz 1.5:1 output vswr f = 0.1 to 3.0 ghz 1.9:1 nf 50 w noise figure f = 1.0 ghz db 7.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 25.5 t d group delay f = 1.0 ghz psec 140 v d device voltage v 4.2 5.25 6.3 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 30 to 70 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 50 ma, z o = 50 w units min. typ. max. vswr
3 MSA-0486 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 50 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .14 178 8.4 2.62 175 C16.2 .154 1 .16 C10 0.2 .14 175 8.3 2.61 170 C16.3 .153 2 .16 C20 0.4 .14 171 8.2 2.57 161 C16.3 .154 3 .17 C39 0.6 .13 168 8.1 2.54 151 C16.0 .158 4 .18 C57 0.8 .13 166 8.0 2.52 141 C15.9 .161 5 .20 C74 1.0 .13 165 7.9 2.48 131 C15.7 .165 6 .21 C88 1.5 .15 168 7.7 2.42 108 C14.8 .182 8 .27 C121 2.0 .21 168 7.3 2.32 84 C14.0 .199 7 .32 C149 2.5 .29 165 6.8 2.18 65 C13.1 .222 4 .38 C168 3.0 .37 153 5.9 1.97 43 C12.7 .231 C1 .40 173 3.5 .44 142 4.8 1.74 24 C12.5 .238 C5 .41 157 4.0 .50 130 3.6 1.52 7 C12.5 .238 C10 .41 145 5.0 .61 109 1.3 1.16 C21 C12.7 .231 C17 .43 132 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 6.5 6.0 7.0 7.5 8.0 frequency (ghz) figure 5. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 nf (db) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, t a = 25 c. 0 2 4 6 8 10 gain flat to dc i d = 30 ma i d = 50 ma i d = 70 ma v d (v) figure 2. device current vs. voltage. 0 20 40 60 80 i d (ma) 234567 1 t c = +85 c t c = +25 c t c = ?5 c 6 7 8 11 12 13 ?5 0 +25 +55 +85 7 8 9 p 1 db (dbm) nf (db) nf g p (db) temperature ( c) figure 3. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =50ma. p 1 db g p 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 4. output power at 1 db gain compression vs. frequency. 3 6 9 12 15 18 21 p 1 db (dbm) i d = 30 ma i d = 50 ma i d = 70 ma i d = 30 ma i d = 50 ma i d = 70 ma typical performance, t a = 25 c (unless otherwise noted)
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9578e (11/99) 86 plastic package dimensions 4 0.51 0.13 (0.020 0.005) 2.34 0.38 (0.092 0.015) 2.67 0.38 (0.105 0.15) 1 3 2 2.16 0.13 (0.085 0.005) dimensions are in millimeters (inches) 1.52 0.25 (0.060 0.010) 0.66 0.013 (0.026 0.005) 0.203 0.051 (0.006 0.002) 0.30 min (0.012 min) c l 45 5 typ. 8 max 0 min ground rf input rf output and dc bias ground a04
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